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利用磁控溅射方法在表面有SiO2 层的Si基片上溅射Ta/NiFe薄膜 ,采用X射线光电子能谱 (XPS)研究了SiO2 /Ta界面以及Ta5Si3 标准样品 ,并进行计算机谱图拟合分析 .实验结果表明在制备态下在SiO2 /Ta界面处发生了热力学上有利的化学反应 :37Ta +15SiO2 =5Ta5Si3 +6Ta2 O5,界面处形成更稳定的化合物新相Ta5Si3 、Ta2 O5.在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡 .
Ta / NiFe thin films were sputtered on Si substrate with SiO2 layer by magnetron sputtering method. The SiO2 / Ta interface and Ta5Si3 standard samples were investigated by X-ray photoelectron spectroscopy (XPS), and the computer spectrum fitting analysis The experimental results show that there is a thermodynamically favorable chemical reaction at the interface of SiO2 / Ta in the prepared state: 37Ta + 15SiO2 = 5Ta5Si3 + 6Ta2 O5, and more stable Ta5Si3 and Ta2O5 compounds are formed at the interface. These reaction products in the ULSI copper interconnect structure of the barrier layer may facilitate the barrier to Cu diffusion.