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Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs Q WRs was saturated by the terrace width (i.e., 90nm) while the size alongthe step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9nm to 13nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.