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建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式.在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响.分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 k时,器件对阳极驱动电压的要求更高.
A parallel grid carbon nanotube array cathode was constructed, which was solved by the model of suspension ball and the image charge method, and the analytic formula of the electric field and the electric field on the top surface of the carbon nanotube was obtained. Based on this, The contact resistance on the cathode electron emission performance.The analysis shows that the carbon nanotubes spacing of about 2 times the height of the carbon nanotube array cathode optimal distribution of the edge of the carbon nanotubes emission electron capacity than its central part of the large In addition to the aspect ratio of the carbon nanotubes, the gate width and the gate spacing also have some effect on the electric field enhancement factor; the existence of the contact resistance greatly reduces the electric field and the emission current on the top surface of the carbon nanotube while the contact resistance is higher than At 800 kΩ, the device has a higher anode drive voltage requirement.