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一、引言近几年来,离子注入技术在金属方面的研究和应用越来越引起人们的重视。但是金属材料的研究要求注入剂量高(一般在10~(17)离子/平方厘米以上),要求注入的离子种类多,这样对离子注入机的发展提出了新的要求。(即注入机束流强、离子源能引出的离子种类多等)。目前欧美等国正在不断解决这一课题,制造束流强(毫安级)、能注入离子种类多的离子注入机。除此之外,还在探索一种新的离子束工艺,以代替直接将所需离子注入金属内的离子注入工艺。这种工艺
I. INTRODUCTION In recent years, the research and application of ion implantation technology in the metal has drawn more and more attention. However, the research of metal materials requires high implantation dose (usually 10 ~ (17) ions / cm 2), requiring more ions to be implanted, thus putting forward new requirements for the development of ion implanter. (That is, the injection machine beam is strong, the ion source can extract more ions, etc.). At present, Europe and the United States and other countries are constantly addressing this issue to create beam current (milliampere level), can inject ion species and more ion implanter. In addition, a new ion beam process is being explored to replace the ion implantation process that directly injects the desired ions into the metal. This craft