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在以前工作的基础上,进一步研究了SrTiO3(001)(STO)衬底上单层FeSe超导薄膜的分子束外延生长.首先,通过去离子水刻蚀、盐酸溶液腐蚀和纯氧气氛中退火等步骤,获得台阶有序、具有单一TiO2终止的原子级平整表面的STO衬底,这是前提条件.这个过程中酸的选择和退火过程中氧的流量是最为关键的因素.其次,在FeSe薄膜的分子束外延生长中,选择适当的Fe源和Se源束流以及衬底温度是关键因素.如选择适当,生长模式为step-?ow生长,这时得到的FeSe薄膜将是原子级平整的.最后一步为退火,这个过程会增强FeSe薄膜结晶性以及它与SrTiO3衬底间的结合强度.
Based on the previous work, the molecular beam epitaxial growth of the single-layer FeSe superconducting thin films on the SrTiO3 (001) (STO) substrate was further studied.First, through the deionized water etching, hydrochloric acid solution etching and pure oxygen atmosphere annealing And other steps to obtain a step order, with a single TiO2-terminated atomically flat surface of the STO substrate, which is a prerequisite for the process of acid selection and annealing oxygen flow rate is the most crucial factor.Secondly, FeSe In molecular beam epitaxy of thin films, choosing appropriate Fe source and Se source beam and the substrate temperature are the key factors.If the appropriate choice, the growth mode is step-? Ow growth, then the resulting FeSe thin film will be atom-level formation The last step is annealing, which enhances the crystallinity of the FeSe thin film and its bond strength to the SrTiO3 substrate.