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本文使用高纯度和高品位的单晶材料，通过Ｃｕ掺杂和退火实验，利用光致发光研究了ＣｄＴｅ发光光谱中１．５８９６ｅＶ处的主要中性受主束缚激子发光的起因．结果表明，该发光峰实际上是由能量极其相近的两个发光峰构成．它们具有两个起因，其中能量较低的一个是ＣｕＣｄ，另一个与Ｃｄ空位ＶＣｄ有关．
In this paper, we use photoluminescence (PL) to study the origin of the main neutral acceptor excitatory excitons at 1.5896eV in the CdTe luminescence spectrum by using high purity and high grade single crystal materials. The results show that the luminescence peak is actually composed of two extremely luminescent peaks. They have two causes, one of which is lower energy CuCd, the other with Cd vacancies VCd.