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报道了自组织生长ＩｎＡｓ／ＧａＡｓ岛状结构生长停顿的研究结果．在完成ＩｎＡｓ岛生长以后，引入不同时间的停顿，然后再淀积ＧａＡｓ盖层，将导致ＩｎＡｓ岛光致发光峰蓝移，发光谱线变宽，同时发光强度减弱．透射电子显微镜分析表明在这种结构中出现了失配位错，在其附近应变得到部分弛豫，成为ＩｎＡｓ材料的俘获陷阱．随着停顿时间加长，ＩｎＡｓ岛密度降低，尺寸变小，光致发光谱发生相应变化．
Reported the results of self-organized growth InAs / GaAs island structure growth standstill. After the growth of InAs island is completed, the pause of different time and the subsequent deposition of GaAs cap layer will result in a blue shift of the photoluminescence peak of InAs islands and a broadening of the emission spectrum, while the luminescence intensity is weakened. Transmission electron microscopy analysis shows that misfit dislocations appear in this structure, and strain relaxation in the vicinity of it results in partial relaxation, becoming a trapping trap for InAs materials. As the pause time lengthened, the density of InAs islands decreased, the size became smaller and the photoluminescence spectrum changed accordingly.