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分析了带有羟基和双胺基的有机碱在Cu-CMP过程中的化学作用.为得到抛光液的最佳配比,在给定的实验条件下对铜进行抛光实验,得到了铜的抛光速率随有机碱浓度的化学作用曲线,并得到了有机碱在抛光液中的最佳浓度.实验结果表明:随着抛光液中有机碱浓度的增加,抛光过程中的化学作用（络合反应）增强,铜的抛光速率随之增大,当有机碱增加到一定浓度时,抛光速率达到最高值,并相应得到了最佳的抛光表面.
In order to obtain the optimal ratio of polishing solution, the chemical reaction of organic base with hydroxyl and diamino groups in Cu-CMP process was analyzed. Under the given experimental conditions, the copper was polished and the copper polishing And the optimum concentration of organic alkali in the polishing solution was obtained.The experimental results show that with the increase of the concentration of organic alkali in the polishing solution, the chemical reaction (complexation reaction) Enhanced, copper polishing rate increases, when the organic base increased to a certain concentration, the polishing rate reached its highest value, and the corresponding polished surface was the best.