Metamorphic In_(0.53)Ga_(0.47)As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

• 作 者: 王琦 吕吉贺 焦德平 周静 黄辉 苗昂 蔡世伟 黄永清 任晓敏
• 机 构: Key Laboratory of Optical Communication & Lightwave Technologies Ministry of Education,Beijing Unive
• 出 处: Chinese Optics Letters
• 发表日期: 2007年06期
• 关键词: metamorphic photodetector MOCVD sorption OEIC encouraging thick bandwidth mature

Top-illuminated metamorphic In_(0.53)Ga_(0.47)As p-i-n photodetectors are grown on the ultrathin low- temperature InP buffered GaAs substrates.Photodetectors with the 300-nm-thick In_(0.53)Ga_(0.47)As ab- sorption layer show a typical responsivity of 0.12 A/W to 1.55-μm optical radiation,corresponding to an external quantum efficiency of 9.6%.Photodetectors with the active area of 50×50(μm)exhibit the-3 dB bandwidth up to 6 GHz.These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit(OEIC)devices.

Top-illuminated metamorphic In_ (0.53) Ga_ (0.47) As pin photodetectors are grown on the ultrathin low-temperature InP buffered GaAs substrates.Photodetectors with the 300-nm-thick In_ (0.53) Ga_ a typical responsivity of 0.12 A / W to 1.55-μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of ​​50 × 50 (μm) exhibit the-3 dB bandwidth up to 6 GHz.These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.