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利用5 V数字逻辑电路、多种高低压高速金属氧化物半导体场效应晶体管(MOSFET)及8路3级驱动电路,逐步提升MOSFET管的能力。利用输入触发信号控制产生具有一定时序关系的8路初级驱动信号,再经过次级驱动电路,提升为8路中高压驱动信号,加速输出级开关,产生高性能的双极性门控信号。该门控脉冲发生器工作电源电压为12V,输出电压为50~-200V,输出脉冲前后沿均为1.5ns,输出信号的脉冲宽度由输入信号控制调节,可在最小输出脉冲宽度3ns至直流信号之间变化。脉冲工作时,最大重频为3.3 MHz,固有延迟为50ns,触发晃动小于0.2ns,体积为86mm×43mm×23mm。
Use 5 V digital logic circuits, a variety of high and low voltage high-speed MOSFETs and eight 3-stage driver circuits to gradually increase the MOSFET’s capabilities. The input triggering signal is used to control the generation of eight primary driving signals with a certain timing relationship. After being driven by the secondary driving circuit, the signal is boosted into eight intermediate-high voltage driving signals, accelerating the output stage switching, and generating the high-performance bipolar gating signal. The gated pulse generator operating voltage is 12V, the output voltage is 50 ~ -200V, the output pulse front and back are 1.5ns, the pulse width of the output signal is controlled by the input signal adjustment, the minimum output pulse width of 3ns to the DC signal Change between. Pulse work, the maximum repetition rate of 3.3 MHz, the inherent delay of 50ns, triggering less than 0.2ns shaking, the volume of 86mm × 43mm × 23mm.