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研究了在 4 H- Si C p型外延层上用 N离子注入制备 n型层的方法及其特性 ,注入层的浓度分布用蒙特卡罗分析软件 TRIM进行了模拟 .为了测试注入层的特性 ,制备了横向肖特基二极管和 TL M(transfer length m ethod)结构 .测得的 N激活浓度为 3.0× 10 1 6 cm- 3,计算出激活率为 0 .0 2 .注入层方块电阻为 30 kΩ/□ ,电阻率为 0 .72 Ω·cm,并计算出电子迁移率为 30 0 cm2 / (V· s) .
The method and properties of n-type layer prepared by N ion implantation on 4 H-Si C p epitaxial layer were studied, and the concentration distribution of the implanted layer was simulated by Monte Carlo software TRIM.In order to test the characteristics of the implanted layer, A lateral Schottky diode and a TLM (transfer length m ethod) structure were fabricated. The measured N activation concentration was 3.0 × 10 16 cm -3, and the activation rate was calculated as 0. 02. The sheet resistance of the injection layer was 30 kΩ / □, resistivity of 0.72 Ω · cm, and the calculated electron mobility of 30 0 cm2 / (V · s).