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本文主要研究了用VHF PECVD方法制备的不同辉光功率条件下系列硅薄膜样品。喇曼测试结果显示 :在不同硅烷浓度 (SC)条件下 ,非晶到微晶的过渡区发生在不同的功率点 ;暗电导随晶化率也体现出不同的变化 ,此结果表明不同SC、不同功率制备样品的结构特性和电学特性的内在规律是不同的 ;另外 ,扫描电子显微镜的测试结果表明样品的表面呈“菜花”状和剖面为柱状的结构特征。
In this paper, a series of samples of silicon thin films fabricated by VHF PECVD with different glow power have been studied. The Raman test results show that at different silane concentration (SC) conditions, the transition region from amorphous to microcrystalline occurs at different power points; dark conductance with crystallization rate also shows different changes, the results show that different SC, The inherent law of the structural and electrical properties of the samples prepared by different power is different. In addition, the results of SEM showed that the surface of the sample was cauliflower-like and the columnar structure was observed.