论文部分内容阅读
对于自动化和工业上的应用等,研制了一种带有敏感、温度补偿和放大电路的硅压阻集成压力传感器(IPS)。此集成压力传感器粘贴在2mm厚的硅支撑上,采用了静电封接技术以减少由支撑及壳体产生的不期望的热应力。在IPS芯片周围的陶瓷片上制造了以激光修正的印刷厚膜电阻用于调节温度补偿及转移函数分度。陶瓷片然后安装在改进了的TO-3外壳内,构成一个三端头器件。本文说明了敏感元件电桥及全组合IPS的实验结果与工作幅宽温度补偿模拟很好的一致性。本文还描述了IPS的零位及非线度的温度依赖性。
For automation and industrial applications, a silicon piezoresistive integrated pressure sensor (IPS) with a sensitive, temperature compensated and amplified circuit has been developed. This integrated pressure sensor is attached to a 2mm thick silicon support using electrostatic sealing to reduce unwanted thermal stresses caused by the support and housing. A laser-modified printed thick-film resistor was fabricated on the ceramic wafer surrounding the IPS chip to regulate temperature compensation and transfer function indexing. The ceramic sheets are then mounted in an improved TO-3 housing to form a three-terminal device. This paper shows that the experimental results of the sensor bridge and all-in-one IPS are in good agreement with the simulation of working width temperature compensation. This article also describes the temperature dependency of the zero and non-linearity of the IPS.