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一 引言 由于扩展电阻探针测量半导体材料电阻率具有极高的空间分辨率(一般可达10~(-9)cm~3),因此它被用来测量电阻率的微区分布和研究各种缺陷的电学行为等。 大规模集成电路的飞跃发展,对半导体材料提出了各种新的要求。为了提高器件性能和成品率,要求元件参数的一致性,对材料的完整性和均匀性就提出了苛刻的要求。为使扩展电阻法在研究适用于
I. INTRODUCTION Since extended resistance probes measure the resistivity of semiconductor materials with extremely high spatial resolution (typically up to 10 -9 cm -3), it is used to measure the distribution of resistivities and to investigate various Defective electrical behavior. The rapid development of large-scale integrated circuits, made of semiconductor materials, a variety of new requirements. In order to improve device performance and yield, the consistency of component parameters is required, and harsh requirements are imposed on the integrity and uniformity of the material. In order to make the expansion resistance method suitable for research