On Basic Parameters and Radiation Theory of Non-Uniform Channel DMOS

• 出 处: Journal of Electronic Science and Technology of China
• 发表日期: 2005年01期
• 关键词: DMOS Uniform capacitor drain mathematics depletion impurity micron junction cont

Researching the non-uniform channel DMOS is thebasic knowledge of the new generation high voltagepower MOS devices and the important domain of theIC, smart power ICs. This dissertation investigates thebasic parameters and the radiation theory ofnon-unifor

Researching the non-uniform channel DMOS is the basic knowledge of the new generation high voltage power MOS devices and the important domain of the IC, smart power ICs. This dissertation investigates the basic parameters and the radiation theory ofnon-unifor