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本文针对高频晶体管生产中所存在的:提高电流放大系数h_(FE)会导致大批管芯发生c、e穿通,或BV_(ceo)急剧下降的现象,分析了晶体管基区穿通的问题,推导出了在收集结发生雪崩击穿之前,基区不穿通的条件,以及穿通电压与收集结反向击穿电压之间的关系等几个新的表达式。给出了基区不穿通的最小宽度同基区平均杂质浓度之间的关系曲线,和其他一系列曲线;讨论了“单结退化”问题;从理论上指出了浅结扩散的必要性和使结浅到什么程度的定量界限;讨论了基区扩散结深对晶体管特征频率的限制等,为解决上述问题及研制f_T更高的微波器件,从扩散参数的选择和控制方面给出了参考数据。
In this paper, we focus on the existence of high-frequency transistors: increasing current amplification factor h (FE) will lead to a large number of die c, e punch through, or sharp decline in BV ceo, analysis of the base of the transistor punch through the problem, derived A few new expressions such as the condition of non-punch through of the base before the avalanche breakdown occurs in the collector junction, and the relationship between the punch-through voltage and the reverse breakdown voltage of the collector junctions are shown. The curve of the relationship between the minimum penetration depth of base area and the average impurity concentration in base area is given, and a series of other curves are also discussed. The problem of “single junction degeneration” is discussed. The necessity of superficial diffusion is pointed out The extent to which the junction is superficial and the limit of quantification is discussed. The limitations of transistor junction frequency, such as the junctional diffusion junction depth, are discussed. In order to solve the above problems and to develop microwave devices with higher f_T, reference data are given from the aspects of diffusion parameter selection and control .