论文部分内容阅读
IBM微电子公司开发了一种SiGe材料的异质结双极晶体管(HBT)，可运行在210GHz频率下。开发的成功表明取得了很大进展，它将扩展Si器件进入40Gbit/s以上的通信市场。IBM采取运行在130MHz的0.18mm的SiGe工艺,使晶体管的频率超过了 200GHz，并降低晶体管基极的垂直厚度。IBM的晶体
IBM Microelectronics has developed a heterojunction bipolar transistor (HBT) of SiGe material that operates at 210GHz. The success of development shows that great progress has been made in expanding Si devices into the 40 Gbit / s or more communications market. IBM took a 0.18mm SiGe process running at 130MHz, allowing transistors to exceed 200GHz and reduce the transistor’s base vertical thickness. IBM’s crystal