Optical waveguide in Nd:Bi_(12)SiO_(20) crystal produced by multi-energy C ion implantation

• 作 者: 刘涛 孔伟金 任莹莹 成燕
• 机 构: School of Electronic and Information Engineering Qingdao University,School of Physics Qingdao Univer
• 出 处: Chinese Physics B
• 发表日期: 2017年07期
• 关键词: waveguide implantation implanted annealing stabilization annealed fabrication re

We report the fabrication of a planar waveguide in the Nd:Bi_(12)SiO_(20) crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric(TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi_(12)SiO_(20) crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi_(12)SiO_(20) crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi_(12)SiO_(20) crystal.

We report the fabrication of a planar waveguide in the Nd: Bi 12 SiO 20 crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200 ° C, 260 ° C and 300 ° C in succession for 30 The effective refractive index profiles at transverse electric (TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd: Bi 12 SiO 20 is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd: Bi_ (12) SiO_ (20) crystal were collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd: Bi_ (12) ) SiO_ (20) crystal.