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本文介绍我所自制低压化学汽相沉积设备生长多晶硅工艺情况。通过实验摸索及流水线试片表明,LPCVD反应器生长多晶硅具有成本低、产量大、薄膜均匀及洁静度高等优点。此外,不用携带气体,工艺简单。我们采用20％的氦气稀释的硅烷,系统压力在0.5乇到1乇下进行淀积,淀积温度为580℃～680℃之间,硅烷流量在200～225cc/分。生长的多晶硅膜厚度为2000～8000,其淀积速率为30～280/分。根据电子扫描显微镜对晶粒的研究表明,晶粒比常压生长的晶粒要小些;晶粒大小随淀积温度增加而增加;同时方块电阻也随淀积温度增加而下降;随膜厚增加方块电阻减小。
This article describes my own low-pressure chemical vapor deposition equipment polysilicon growth process. Through experimental exploration and pipeline test, it shows that LPCVD reactor has the advantages of low cost, large output, uniform film and high cleanliness. In addition, do not carry gas, the process is simple. We use 20% helium diluted silane, system pressure is 0.5 torr to 1 torr deposition, the deposition temperature is between 580 ℃ ~ 680 ℃, the silane flow rate of 200 ~ 225cc / min. The grown polycrystalline silicon film has a thickness of 2000 to 8000 and a deposition rate of 30 to 280 / min. According to the SEM of the grain, the grain size is smaller than that of the normal pressure. The grain size increases with the increase of the deposition temperature. At the same time, the sheet resistance decreases with the increase of the deposition temperature. With the increase of the film thickness Increase the box resistance decreases.