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发现由ｎ型单晶硅光照辅助阳极化制备的多孔硅在经过较长时间室温空气中放置氧化后，部分样品出现了蓝色光致荧光．荧光及红外透射、反射测量表明，在较强的氩离子４８８ｎｍ激光照射下制备的样品，经放置氧化后形成氧化层的组织较好，即氧化层中的应力较小、非晶程度相对较低、ＳｉＯＳｉ的网络结构比较完整．而这样的氧化层是有利于多孔硅光致荧光中的蓝光发射的．
It was found that the porous silicon prepared by n-type monocrystalline silicon-assisted anodization showed blue photofluorescence in some samples after being oxidized in air at room temperature for a long time. Fluorescence and infrared transmission and reflection measurements show that the samples prepared under the strong argon ion 488nm laser irradiation have a better organization of the oxide layer after being oxidized, ie, the stress in the oxide layer is smaller and the degree of amorphousness is relatively lower , Si O Si network structure is more complete. Such an oxide layer is favored for blue light emission in porous silicon photofluorescence.