【摘 要】
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Energy band structure and interfacial compatibility of heterojunctions are crucial for photocatalysts in promoting photogenerated charge separation and transfer.Here,a combined strategy of vacancy engi-neering and quantum effect via a facile phosphating p
【机 构】
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Nanomaterials and Electrocatalysis Laboratory,College of Materials and Engineering,Qingdao Universit
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Energy band structure and interfacial compatibility of heterojunctions are crucial for photocatalysts in promoting photogenerated charge separation and transfer.Here,a combined strategy of vacancy engi-neering and quantum effect via a facile phosphating process is reported,for the first time,to modulate the energy band structure and the interface of ZnxCd1-xS/CoP quantum dots (ZCSv/CoP QDs) heterojunc-tion.The combined experimental and theoretical investigation revealed that phosphating process trans-formed CoOx QDs to CoP QDs,and more importantly,generated considerable amount of sulfur vacancies in ZCSv.As a result,a Type Ⅱ ZCSv/CoP QDs heterojunction with compatible interfaces was constructed via in-situ generated P-Zn,P-Cd and S-Co bonds,which facilitated the separation and transfer of the photo-generated charge and thus resulted in a high ability towards hydrogen evolution under visible light(17.53 mmol g-1 h-1).This work provides an effective and adaptable strategy to modulate band structure and interfacial compatibility of heterojunctions via vacancy engineering and quantum effect.
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