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详细分析了 ＭＯＣＶＤ ＡＩＧａＩｎＰ ＬＥＤ外延片中 Ｖ族源的空流保护作用、Ⅲ族源的存储效应以及 Ｍｇ掺杂的延迟和记忆效应。设计出了合理实用的源气开关程序，它有利于生长无定带隙夹层、突变异质结界面的ＡＩＧａＩｎＰ ＬＥＤ外延片。
The protective effect of V source on MOCVD AIGaInP LED epitaxial wafers was analyzed in detail. The memory effect of Ⅲ source and the delay and memory effect of Mg doping were analyzed. A reasonable and practical source gas switching program is designed, which is conducive to growing AIGaInP LED epitaxial wafers with amorphous band gap and mutation heterojunction interface.