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密歇根州米德兰市-全球有机硅及宽带隙半导体技术领先企业道康宁公司,近日推出全新碳化硅(SiC)晶体分级结构,为碳化硅晶体创立了行业新标准。新分级结构对相关致命性产品缺陷,如微管位错(MPD)、螺纹螺位错(TSD)、和基面位错(BPD)等,具有更严格的容忍度。这一开创性分级结构旨在优化使用道康宁高品质Prime Grade系列100mm碳化硅晶片设计和制造的新一代电力电子器件的设计自由度、性能和成本。
MIDLAND, MI - Dow Corning Corporation, a global leader in silicones and wide bandgap semiconductors, recently introduced a new silicon carbide (SiC) crystal hierarchy to create a new industry standard for silicon carbide crystals. The new hierarchy has more stringent tolerances for related fatal product defects such as microtubular dislocations (MPDs), threading screw dislocations (TSDs), and basal dislocations (BPDs). This groundbreaking grade is designed to optimize the design freedom, performance, and cost of next-generation power electronics designed and manufactured using Dow Corning’s high-quality Prime Grade Series 100mm silicon carbide wafers.