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使用带原位置加热装置的俄歇电子能谱仪研究了含残余Ｓｎ为０．０１３％的Ｆｅ─３％Ｓｉ单晶的（１１０）表面偏析。将该合金加热到约７００ｋ以上，Ｓｉ偏析发生于用氩离子溅射后的表面。偏析动力学的结果表明，通过用离子轰击产生的表面损伤增强了偏析过程。已发现在高温下Ｓｉ在表面上被Ｓｎ所取代，Ｓｎ的偏析过程为由基体内向表面的大量扩散所控制。Ｓｉ和Ｓｎ的表面偏析发生在次表层；在Ｓｎ偏析的同时，在Ｓｎ偏析层之下形成Ｓｉ富集区域。除偏析特征外，还讨论了这些溶质问相互作用对偏析的影响。
(110) surface segregation of Fe-3% Si single crystals containing 0.013% residual Sn was investigated using Auger electron spectroscopy with an in-situ heating device. The alloy is heated to above about 700k and Si segregation occurs on the surface after sputtering with argon ions. The results of segregation kinetics show that the segregation process is enhanced by surface damage caused by ion bombardment. It has been found that at high temperatures Si is replaced by Sn on the surface and the segregation of Sn is controlled by the substantial diffusion of the interior surface of the substrate. Surface segregation of Si and Sn occurs in the subsurface; while Sn segregates, a Si-rich region is formed below the Sn segregation layer. In addition to segregation features, the effect of these solute interactions on segregation is also discussed.