【摘 要】
：
Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices,whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature.However,the controllable mass-fabrication
【机 构】
：
Beijing National Laboratory for Molecular Sciences,CAS Research/Education Centre for Excellence in M
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Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices,whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature.However,the controllable mass-fabrication of high-quality GNR arrays remains a major challenge.In particular,the in situ growth of GNR arrays through template-free chemical vapor deposition (CVD) has not been realized.Herein,we report a template-free CVD strategy to grow large-area,high-quality and self-aligned GNR arrays on liquid copper surface.The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387,which is higher than those of reported CVD-GNRs.The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays.Our approach is operationally simple and efficient,offering an assurance for the use of GNR arrays in integrated circuits.
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