Total dose ionizing irradiation effects on a static random access memory field programmable gate arr

• 作 者: 高博 余学峰 任迪远 李豫东 孙静 崔江维 王义元 李明
• 机 构: Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Xinjiang Province Ke
• 出 处: 半导体学报
• 发表日期: 2012年03期
• 关键词: irradiation annealing programmable accumulated irradiated meaningful Stratix det

SRAM-based FPGA devices are irradiated by ~(60)Coγrays at various aose rates 10 investigate total dose effects and the evaluation method.The dependences of typical electrical parameters such as static power current, peak-peak value,and delay time on total dose are discussed.The experiment results show that the static power current of the devices reduces rapidly at room temperature(25℃) and high temperature(80℃) annealing after irradiation.When the device is irradiated at a low dose rate,the delay time and peak-peak value change unobviously with an increase in the accumulated dose.In contrast,the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s.

SRAM-based FPGA devices are irradiated by ~ (60) Coγrays at various asepts 10 investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak-peak value, and delay time on total dose are discussed.The experiment results show that the static power current of the devices reduces rapidly at room temperature (25 ° C) and high temperature (80 ° C) annealing after irradiation. How the device is irradiated at a low dose rate, the delay time and peak-peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy (Si) when the dose rate increases to 0.71 Gy (Si) / s.