论文部分内容阅读
Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism.It was found that radial growth can be enhanced by increasing the growth temperature.The growth of radial heterostructure can be realized at temperature higher than 500℃,while the growth temperature of axial heterostructure is lower than 440℃.The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.
Vertical zinc blende GaAs / AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism. It was found that radial growth can be enhanced by increasing the growth temperature. The growth of radial heterostructure can be realized at a temperature higher than 500 ° C. while the growth temperature of axial heterostructure is lower than 440 ° C. The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.