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蓝宝石上外延生长ＺｎＯ薄膜在表面波和声光器件中有重要的应用．用微波电子回旋共振（ＥＣＲ）等离子体溅射法在蓝宝石（０１１２）晶面上外延生长了ＺｎＯ薄膜，膜无色透明，并且表面光滑，基片温度为３８０℃，为探索沉积工艺参数对薄膜结构的影响，用ＸＲＤ对不同基片温度和沉积速率生长的ＺｎＯ薄膜进行了研究．
ZnO thin films grown epitaxially on sapphire have important applications in surface wave and acousto-optical devices. ZnO thin film was epitaxially grown on the sapphire (0112) crystal plane by microwave electron cyclotron resonance (ECR) plasma sputtering. The film was colorless and transparent and had a smooth surface with a substrate temperature of 380 ℃. In order to explore the effect of deposition process parameters on the thin film Structure of ZnO thin films grown by different substrate temperature and deposition rate were studied by XRD.