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利用雾化热解工艺,在Si(100)衬底上制备了Eu掺杂的ZnO薄膜,通过N2的作用,将前驱体溶液输送到衬底表面,同时为实现ZnO的晶化,衬底温度保持在350℃。通过RBS分析了薄膜和衬底之间的原子分布,结果显示了ZnO薄膜与Si衬底之间存在过渡层。对RBS数据的分析表明该过渡层的形成是由于Si向ZnO层中的扩散,表明Si向氧化物中的扩散是不能忽略的,即使在350℃的低温下。同时,作者利用Fick扩散方程对Si向Eu3+掺杂ZnO薄膜的扩散行为进行了分析,结果表明掺杂离子Eu3+具有阻止Si扩散的能力,其原因可能与Eu3+离子在晶界上的偏析有关。
Eu atom-doped ZnO thin films were prepared on Si (100) substrate by atomization pyrolysis process. The precursor solution was transported to the substrate surface by the action of N2. At the same time, in order to realize the crystallization of ZnO, the substrate temperature Hold at 350 ° C. The atomic distribution between the thin film and the substrate was analyzed by RBS. The results showed that there was a transition layer between the ZnO thin film and the Si substrate. Analysis of the RBS data shows that the formation of the transition layer is due to the diffusion of Si into the ZnO layer, indicating that the diffusion of Si into the oxide can not be neglected even at a low temperature of 350 ° C. At the same time, the authors used the Fick diffusion equation to analyze the diffusion behavior of Si toward Eu3 + doped ZnO thin films. The results show that the doped Eu3 + has the ability to prevent the diffusion of Si, which may be related to the segregation of Eu3 + ions on the grain boundaries.