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利用 Mg Ka X射线作为激发源,对 a-Si:(Cl,H)薄膜进行了 PESIS研究.样品是采用辉光放电方法在SiCl_4-SiH_4-H_2混合气体中,当石墨衬底温度为350℃时生长的.实验发现,薄膜中的Cl只起补偿 Si悬挂键的作用,不起掺杂作用.对Si 2p光电子峰进行分解,得到Cl引起Si 2p能级的化学位移为 1.1± 0.1eV.根据原子电负性的考虑,认为在 a-Si:(Cl,H)薄膜中,只存在 Si-Cl单键结合,不存在 Si-Cl_2、Si-Cl_3和 Si-Cl_4的结合形式.对Cl 2p光电子峰的分析结果表明,在这种薄膜中,Cl只有一种化学形态,即Si-Cl结合态,不存在分子Cl_2.
A-Si: (Cl, H) thin films were studied by PESIS using Mg Ka X-ray as excitation source.The samples were prepared by glow discharge method in SiCl 4 -SiH 4 -H 2 mixed gas with graphite substrate temperature of 350 ℃ .It is found that Cl can only compensate the dangling bonds of Si and can not afford doping, and the Si 2p photoelectron peak is decomposed to give a chemical shift of 1.1 ± 0.1eV due to the Cl induced Si 2p energy level. According to the electronegativity of the atom, it is considered that there exists only Si-Cl single bond in the a-Si: (Cl, H) thin film and there is no combination of Si-Cl_2, Si-Cl_3 and Si-Cl_4. The results of 2p photoelectron peak analysis show that there is only one chemical form of Cl in this film, that is, the bound state of Si-Cl, and the absence of molecule Cl_2.