,Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff

• 作 者: CHENG Wei JIN Zhi SU Yong-Bo LIU Xin-Yu XU An-Huai QI Ming
• 机 构: Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029“,”Shanghai Institute of Mic
• 出 处: 中国物理快报（英文版）
• 发表日期: 2009年3期

To eliminate the conduction band spike at the base-collector interface,an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure.The DHBT with emitter area of 1.6×15 μm2 exhibits current-gain cutoff frequency ft = 242 GHz at the high collector current density Jc = 2.1 mA/μm2,which is to our knowledge the highest ft reported for the mesa InP DHBT in China.The breakdown voltage in common-emitter configuration is more than 5 V.The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits.