论文部分内容阅读
包含新技术、新材料的新型器件的不断涌现,使现有的传统器件模型已不能完全表征石墨烯场效应晶体管(GFET)的特性。提出了一种基于经验公式的非线性模型来表征GFET的特性,该模型对传统经验模型的公式和拓扑结构进行了改进,使其能更好地表征GFET的特性。该模型包含了GFET的栅源电流模型、源漏电流模型、电容模型和低频散射效应等。此外该模型为可定标的模型,可用于一定尺寸范围的器件的仿真。该模型可集成在仿真软件中进行石墨烯电路的设计,其直流I-V特性和多偏置S参数的仿真结果与测试结果吻合较好,验证了该模型的有效性。
The continuous emergence of new devices containing new technologies and new materials has made it impossible for existing conventional device models to fully characterize the properties of graphene field effect transistors (GFETs). A nonlinear model based on empirical formula is proposed to characterize the GFET. The model improves the formula and topology of the traditional empirical model to better characterize the GFET. The model includes the gate-source current model, source-drain current model, capacitance model and low-frequency scattering effect of GFET. In addition, the model is a scalable model that can be used to simulate a range of device sizes. The model can be integrated into the design of graphene circuit in the simulation software. The simulation results of DC I-V and multi-bias S parameters are in good agreement with the test results, and the validity of the model is verified.