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研究了掺杂Ｌａ２Ｏ３施主的（ＭｇＣｏＮｉ）Ｏ系氧敏材料性能．ｘ－ｒａｙ衍射分析表明少量施主的掺入并不改变材料的晶体结构．材料在高温时的电导与氧分压关系表明施主对材料的缺陷结构具有相当重要的影响．在高温下，施主掺杂样品的缺陷仍以金属缺位为主，在１００＞ＰＯ２≥１０－１０区间，金属缺位补偿占优，此时表现为电导对氧分压不太敏感．用缺陷化学的方法对施主的行为进行了合理的解释．
The properties of (MgCoNi) O-based oxygen-sensitive materials doped with La2O3 were investigated. x-ray diffraction analysis shows that the incorporation of a small amount of donor does not change the crystal structure of the material. The dependence of the conductance on the partial pressure of oxygen at high temperatures shows that the donor has a considerable influence on the defect structure of the material. At high temperature, the defects of the donor-doped samples are still mainly metal vacancies. In the region of 100> PO2≥10-10, the metal vacancy compensation is dominant, and the conductivity is less sensitive to the partial pressure of oxygen. The method of defect chemistry is used to explain the behavior of the donors reasonably.