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用俄歇电子能谱(AES)对等离子增强化学汽相淀积(PECVD)氢化非晶碳化硅(a-SiC∶H)薄膜进行了组分的深度剖析、半定量分析以及化学分析.俄歇深度剖析曲线表明PECVD淀积的薄膜均匀性非常好;用俄歇半定量结果比较了薄膜成分同淀积工艺参量之间的一些关系;根据实验获得的Si LVV和CKLL俄歇谱比较和讨论了不同[Si]/[C]浓度比薄膜的化学特征.
In-depth profiling, semi-quantitative analysis and chemical analysis of the components of plasma-enhanced chemical vapor deposition (PECVD) hydrogenated amorphous silicon carbide (a-SiC: H) films were carried out by Auger electron spectroscopy (AES) The depth profile shows that the film deposited by PECVD is very homogeneous. The relationship between the film composition and deposition parameters is compared with Auger’s semi-quantitative results. Based on the experimental results of Si LVV and CKLL Auger spectra, Different [Si] / [C] concentrations than the chemical characteristics of the film.