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报道用金属有机汽相外延技术(MOVPE)生长GaAs/Al_xGa_(1-x)As超晶格结构材料及其光电器件应用,用横断面透射电子显微术(XTEM)表征外延层结构.在自电光效应光学双稳态器件(SEED)中,超晶格层-层之间界面清晰,厚度均匀,周期性完整.对某些用超晶格作缓冲层的高电子迁移率晶体管(HEMT)结构,观察到超晶格对生长面的平滑作用及间断生长造成的界面等.
Reported the growth of GaAs / Al_xGa_ (1-x) As superlattice structure materials and their optoelectronic devices by metal organic vapor phase epitaxy (MOVPE), and the epitaxial layer structure was characterized by cross-sectional transmission electron microscopy In SEED, the interface between the superlattice layer and the layer is clear, with uniform thickness and periodicity. For some high electron mobility transistor (HEMT) structures with superlattice as the buffer layer , It is observed that the superlattice has a smooth effect on the growth surface and an interface caused by the intermittent growth.