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利用微波电子回旋共振等离子体化学气相沉积技术 ,通过改变微波输入功率的方法 ,沉积了具有不同结构特征的氟化非晶碳 (α C∶F)薄膜。随着微波功率从 14 0W升高到 5 6 0W ,薄膜的光频介电常数从 2 .2 6降至 1.6 8,红外光谱 (FTIR)分析表明薄膜的键结构由以CF基团为主变化到CF与CF2 基团共存。由于CF2 基团的极化比CF基团弱 ,薄膜中CF2 基团的增加可能是导致光频介电常数减小的因素
By means of microwave electron cyclotron resonance plasma chemical vapor deposition technique, fluorinated amorphous carbon (α C:F) thin films with different structural features were deposited by changing the microwave input power. As the microwave power increased from 140 W to 560 W, the optical dielectric constant of the film decreased from 2.2 6 to 1.6 8, and the FTIR analysis showed that the bond structure of the film mainly consisted of CF groups Coexist with CF2 and CF2 groups. As the CF2 group is weaker than the CF group, the increase of the CF2 group in the film may be the factor that leads to the decrease of the optical frequency dielectric constant