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本文应用平面波展开法数值模拟了椭圆柱二维光子晶体TM模带隙特性,数值模拟椭圆长短半轴对带隙特性的影响,结果得到:当椭圆长短半轴趋于相等时形成带隙宽度逐渐增加。数值模拟四种材料即SiC、GaAs、Ge和ZnO构成椭圆柱正方晶格二维光子晶体时,TM模带隙特性和第一带隙变化情况,结果得到介电常数高的材料形成较宽带隙,随着介电常数的增加,第一带隙上下边界的归一化频率逐渐降低,但是,第一带隙带隙宽度逐渐增加。
In this paper, the numerical simulation of the band gap characteristics of two-dimensional (2D) photonic crystal with elliptic cylinder is carried out by using the plane wave expansion method. The numerical simulation of the influence of the half-length of the ellipse on the bandgap characteristic results in that: increase. Numerical simulations of the bandgap characteristics of TM mode and the first bandgap change of four materials, namely, SiC, GaAs, Ge and ZnO, constitute the elliptical columnar two-dimensional photonic crystal. As a result, a material with a high dielectric constant forms a wide bandgap With the increase of dielectric constant, the normalized frequencies of the upper and lower boundaries of the first band gap gradually decrease, but the band gap of the first band gap gradually increases.