Thermal investigation of high-power GaAs-based laser diodes

• 作 者: Jichuan Liu Cuiluan Wang Suping Liu Xiaoyu Ma
• 机 构: National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductor,Chinese A
• 出 处: Journal of Semiconductors
• 发表日期: 2017年05期
• 关键词: laser diodes high power temperature rise thermal resistance electrical transient

The thermal characteristics of high-power AlGaAs/GaAs laser diodes(LDs) at high current(2-10 A)are studied with electrical transient method.The temperature rise increases linearly with the current.The thermal resistance of chip is the largest proportion of total thermal resistance.By increasing the width of the chip from 500 to 800 fim,the temperature rise and thermal resistance decrease by 8.5%and 8.8%,respectively.

The thermal characteristics of high-power AlGaAs / GaAs laser diodes (LDs) at high current (2-10 A) are studied with electrical transient method. The temperature rise increases linearly with the current. Thermal resistance of chip is the largest proportion of total thermal resistance. By increasing the width of the chip from 500 to 800 fim, the temperature rise and thermal resistance decrease by 8.5% and 8.8%, respectively.