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为了设计功率集成电路所需的低功耗横向功率器件,提出了一种具有阶梯氧化层折叠硅横向双扩散金属-氧化物-半导体(step oxide folding LDMOS,SOFLDMOS)新结构.这种结构将阶梯氧化层覆盖在具有周期分布的折叠硅表面,利用阶梯氧化层的电场调制效应,通过在表面电场分布中引入新的电场峰而使表面电场分布均匀,提高了器件的耐压范围,解决了文献提出的折叠积累型横向双扩散金属-氧化物-半导体器件击穿电压受限的问题.通过三维仿真软件ISE分析获得,SOFLDMOS结构打破了硅的极限关系,充分利用了电场调制效应、多数载流子积累和硅表面导电区倍增效应,漏极饱和电流比一般LDMOS提高3.4倍左右,可以在62 V左右的反向击穿电压条件下,获得0.74 mΩ·cm~2超低的比导通电阻,远低于传统LDMOS相同击穿电压下2.0 mΩ·cm~2比导通电阻,为实现低压功率集成电路对低功耗横向功率器件的要求提供了一种可选的方案.
In order to design a low-power lateral power device for power integrated circuits, a new structure of step oxide folding LDMOS (SOFDMOS) has been proposed, The oxide layer is covered on the surface of the folded silicon with periodic distribution. By using the electric field modulation effect of the step oxide layer, the surface electric field is distributed uniformly by introducing a new electric field peak in the surface electric field distribution, which improves the withstand voltage range of the device. The problem of limited breakdown voltage of folded-type double-diffused metal-oxide semiconductor devices is proposed.After the ISE analysis of 3D simulation software SOFDMOS, the limit of silicon is broken down and the electric field modulation effect is fully utilized, and the majority of current carrying Sub-accumulation and silicon surface conduction region multiplication effect, the drain saturation current than the average LDMOS increased about 3.4 times, you can reverse breakdown voltage of about 62 V, 0.74 mΩ · cm ~ 2 ultra-low on-resistance , Much lower than the same breakdown voltage of the traditional LDMOS 2.0mΩ · cm ~ 2 than the on-resistance, in order to achieve low-voltage power integrated circuits for low-power lateral power devices Seeking to provide an alternative solution.