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A series of 60~nm thick indium oxide thin-films,all amorphous as determined by x-ray diffraction,were found to have physical and electrical properties that depended on the temperature of deposition.The carrier mobility and flm conductivity decreased with decreasing deposition temperature;the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed.The density of the flm also decreased with deposition temperature from 7.2g/cm3 at+50℃ to 5.3g/cm3 at 100℃.
A series of 60 ~ nm thick indium oxide thin films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. Carrier mobility and flm conductivity decreased with decreasing deposition temperature ; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. the density of the flm also decreased with deposition temperature from 7.2 g / cm3 at + 50 ° C to 5.3 g / cm3 at 100 ° C.