论文部分内容阅读
利用射频磁控溅射法分阶段调制溅射气压在石英衬底上沉淀ZnO∶Ga薄膜。实验分为四组,分别是0.7 Pa/1Pa,1 Pa/1 Pa,1.5 Pa/1 Pa,2 Pa/1 Pa。对样品的晶体微结构,电学性质和光学性质进行了分析。经过表征发现:不同溅射气压状态下ZnO∶Ga薄膜都具有(002)方向的择优取向,呈ZnO的六角纤锌矿晶体结构;第一阶段溅射低气压时候的样品的电阻率较低;可见光透过率随着第一阶段溅射气压的升高不断降低;PL分析时,不同的气压状态下都出现紫外发光峰和蓝色发光峰,随着第一段溅射气压的升高样品本征发光峰和缺陷发光峰都加强。
A ZnO: Ga film was deposited on a quartz substrate using a radio frequency magnetron sputtering method in which the sputtering gas pressure was modulated in stages. The experiment was divided into four groups, respectively 0.7 Pa / 1 Pa, 1 Pa / 1 Pa, 1.5 Pa / 1 Pa, 2 Pa / 1 Pa. The crystal microstructure, electrical properties and optical properties of the samples were analyzed. The results show that ZnO: Ga films have the preferred orientation in the (002) direction at different sputtering pressures and have a hexagonal wurtzite crystal structure of ZnO. The resistivity of the samples at low sputtering pressure is low in the first stage. The visible light transmittance decreased with the increase of the sputtering pressure in the first stage. In the PL analysis, the ultraviolet and the blue emission peak appeared under different pressure conditions. With the increase of the sputtering pressure in the first stage, The intrinsic and defect luminescence peaks are enhanced.