论文部分内容阅读
采用射频磁控溅射方法,在P型硅基片上制备了非晶掺氮氧化铟锌沟道层及其薄膜晶体管(a-IZO∶N-TFTs)器件,探讨了氮气对a-IZO∶N-TFTs性能和电学稳定性的影响。研究发现,当沉积过程中的氮气流量增加时,a-IZO∶N-TFTs的阈值电压(Vth)不断右移,说明氮气掺杂有效抑制了器件的载流子浓度。在对a-IZO∶N-TFTs进行0~5400 s的栅极正偏压应力测试中发现,通入4 m L/min(标准状态)的氮气能使Vth的变化量从3.77下降到0.72 V,表明氮气掺杂提高了a-IZO∶NTFTs的电学稳定性。然而,同时发现过量掺杂氮气也会造成新的氮相关缺陷从而降低器件的稳定性。
Amorphous doped indium-zinc-oxide-zinc-oxide channel layer and its thin-film transistor (a-IZO: N-TFTs) devices were fabricated on the P-type silicon substrate by RF magnetron sputtering. The effects of nitrogen on a-IZO: N -TFTs performance and electrical stability. It was found that the threshold voltage (Vth) of a-IZO: N-TFTs shifted to the right as the nitrogen flow rate increased during the deposition, indicating that nitrogen doping effectively suppressed the carrier concentration of the device. In a positive gate bias test of 0-5,400 s for a-IZO: N-TFTs, it was found that the change of Vth from 3.77 to 0.72 V was achieved by introducing 4 m L / min of nitrogen , Indicating that nitrogen doping improves the electrical stability of a-IZO: NTFTs. However, it has also been found that excessive doping with nitrogen can also lead to new nitrogen-related defects that reduce device stability.