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报道了980 nm高功率低发散角垂直腔面发射激光器(VCSEL)阵列。通过增大阵列单元的出光孔径和单元间距来减小阵列器件的电阻和热阻,制作的台面为直径250μm,氧化孔径200μm,单元间距280μm的4×4二维阵列,与有源区面积相同的单管器件相比具有更高的输出功率。在室温连续工作条件下,阵列在注入电流6 A时最高输出功率为1.81 W,阈值电流为1.2 A,斜率效率为0.37 W/A,微分电阻为0.01Ω。针对较大的远场发散角对单元器件有源区中电流密度分布进行了计算,分析了器件高阶横模产生的原因。使用镀制额外金层的结构来改善远场发散角,将半角宽度由30°压缩到15°以下,改进后器件的输出功率略有下降。60℃恒电流模式寿命测试结果显示器件在800 h后输出功率衰减小于10%。
A 980 nm high power, low divergence vertical cavity surface emitting laser (VCSEL) array is reported. The resistance and the thermal resistance of the array device are reduced by increasing the light exit aperture and the cell pitch of the array element. The prepared mesa is a 4 × 4 two-dimensional array with a diameter of 250 μm, an oxidation aperture of 200 μm and a cell pitch of 280 μm, Compared to single-tube devices have higher output power. Under continuous operating conditions at room temperature, the maximum output power of the array is 1.81 W at a current injection of 6 A, the threshold current is 1.2 A, the slope efficiency is 0.37 W / A, and the differential resistance is 0.01 Ω. The current density distribution in the active region of the device is calculated according to the larger far-field divergence angle, and the reason of the high-order transverse mode of the device is analyzed. Using the structure of plating additional gold layer to improve the far-field divergence angle, the half-width width is reduced from 30 ° to below 15 °, and the output power of the improved device slightly decreases. 60 ℃ constant current mode life test results show that the device output power attenuation less than 10% after 800 h.