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在开管H_2气流系统中,利用普通滑移舟,在(111)A CdTe衬底上;液相外延生长出Hg_(1-x)Cd_xTe(0.17≤x≤0.3)外延层。用这种方法生长的x=0.2的外延层,空穴浓度在10~(17)—10~(18)厘米~(-3)范围,霍耳迁移率在100—500厘米~2/伏秒范围。外延层的表面似镜面一般,电子显微探针分析(EMPA)得到的外延层的数据表明:在外延层和衬底之间的界面处,有陡变的成份转变。也研究了在250—400℃温度范围内的Hg过压条件下,退火对生成层性能的影响。观测在400℃退火后界面附近组份的变化。与此相反,在250—300℃温度范围内退火,得到了性能良好的n型层,未出现明显的组份变化。同时论证了可以在(111)A CdTe衬底上连续生长Hg_(1-x),Cd_xTe/Hg_(1-y)Cd_yTe的双异质结构。
In open tube H_2 gas flow system, an epitaxial layer of Hg_ (1-x) Cd_xTe (0.17≤x≤0.3) was grown by liquid phase epitaxy on (111) A CdTe substrate using a normal slippery boat. The epitaxial layer of x = 0.2 grown by this method has a hole concentration in the range of 10 to (17) -10 to (18) cm -3 and a Hall mobility of 100 to 500 cm 2 / range. The epitaxial layer has a mirror-like surface. The data from the epitaxial layer obtained by electron microprobe analysis (EMPA) show that there is a sharp change of composition at the interface between the epitaxial layer and the substrate. The effect of annealing on the properties of the formed layer was also investigated under Hg overvoltages in the temperature range of 250-400 ° C. The changes of the components near the interface after annealing at 400 ° C were observed. In contrast, annealing at a temperature in the range of 250-300 ° C yielded a good n-type layer with no noticeable component change. The double heterostructures that can grow Hg_ (1-x), Cd_xTe / Hg_ (1-y) Cd_yTe on (111) A CdTe substrate are also demonstrated.