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近年来,有许多利用非晶硅锗合金(a-Si_(l-x)Ge_x·H)作为长波长光探测器材料的研究报导.p-i-n结构的a-SiGe∶H二极管已成功地用于检测红外光.这表明采用非晶硅薄膜晶体管工艺,有可能在玻璃基底上制作红外光电子集成电路.在我们对非晶硅光传感器的研究中,肖特基势垒二极管的性能优于p-i-n结构,它快速响应、制造简单、可靠性高。这促使我们开展对a-Si_(l-x)Ge_x∶H红外肖特基势垒探测器的研究.
In recent years, there are many studies using a-Si (lx) Ge_x · H as long-wavelength photodetector materials.Pin-structured a-SiGe: H diodes have been successfully used to detect infrared light .This shows that the use of amorphous silicon thin film transistor technology, it is possible to make infrared optoelectronic integrated circuits on a glass substrate.In our research on amorphous silicon optical sensors, Schottky barrier diodes performance better than the pin structure, it is fast Responsive, easy to manufacture and highly reliable. This prompted us to carry out a-Si_ (l-x) Ge_x: H infrared Schottky barrier detectors.