,Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 μm on GaAs Grown by Molecular Beam Epitaxy

• 作 者: WANG Hai-Li WU Dong-Hai WU ning-peng NI Hqiao-Qiao HUANG She-Song XIONG Yong-Hua WANG Peng-Fei HAN Qin NIU Zhi-Chuan I. Tang-ring S. M. Wang
• 机 构: State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Acad
• 出 处: 中国物理快报(英文版)
• 发表日期: 2009年1期

We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667 A/cm2 under pulsed operation. The pulsed lasers can operate up to 286 K.