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研究了电荷耦合器件(CCD)位移辐射效应的损伤机理。分析了位移损伤诱发的体缺陷对CCD工作性能的影响。研究了位移损伤导致CCD电荷转移效率降低、体暗电流密度增大、暗电流尖峰以及随机电码信号(RTS)出现的规律和机理。
The damage mechanism of displacement radiation effect of charge-coupled device (CCD) was studied. The effects of displacement damage induced body defects on CCD performance were analyzed. The regularity and mechanism of displacement damage caused by CCD charge transfer efficiency reduction, body dark current density increase, dark current spikes and random code signals (RTS) were studied.