Optical properties of F- and H-terminated armchair silicon nanoribbons

• 作 者: 鲁道邦 濮春英 宋玉玲 潘群娜 周大伟 徐海如
• 机 构: College of Physics and Electronic Engineering, Nanyang Normal University,
• 出 处: Chinese Physics B
• 发表日期: 2015年12期
• 关键词: terminated dielectric attributed mixing hexagonal photoelectric zigzag reflectiv

The optical properties of F- and H-terminated silicon nanoribbons with armchair edges(F- and H- terminated ASi NRs)are compared by using the first-principles within the density function theory(DFT) framework. The results show that compared with for H-terminated 7-ASi NR, the dielectric function for the F-terminated 7-ASi NR has a red shift, which is mainly attributed to the narrower band gap because of the σ–π mixing effect of F–Si bonds in F-terminated 7-ASi NR.The peaks in the energy loss spectra for both systems represent the characteristics associated with the plasma resonance,which correspond to the trailing edges in the reflection spectra. These properties show that the different terminated atoms in7-ASi NRs affect mainly the optical properties in the low energy range. Because of the rich optical properties, the 7-ASi NR could be a potential candidate for photoelectric nanodevice.

The optical properties of F- and H-terminated silicon nanoribbons with armchair edges (F- and H-terminated ASi NRs) are compared by using the first-principles within the density function theory (DFT) framework. The results show that compared with for H-terminated 7-ASi NR, the dielectric function for the F-terminated 7-ASi NR has a red shift, which is mainly attributed to the narrower band gap because of the σ-π mixing effect of F-Si bonds in F- terminated 7-ASi NR.The peaks in the energy loss spectra for both systems represent the characteristics associated with the plasma resonance, which correspond to the trailing edges in the reflection spectra. These properties show that the different terminated atoms in7-ASi NRs affect mainly the optical properties in the low energy range. Because of the rich optical properties, the 7-ASi NR could be a potential candidate for photoelectric nanodevice.