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自70年代液相外延得到迅速发展以来,在对短时间生长(1～30s)得到的亚微米异质外延层的丰富经验基础上,1982年以后,人们提出了LPE短时间生长机制的理论分析。但迄今为止,国内外对LPE生长接触后极短时间的,特别是初始生长速率的变化行为的研究仍是猜测性地定性分析。研究异质界面问题最有效、最可信的方法是Auger深度离子剥离分析,它可以在2nm以下的精度显示异质固态结合处各元素沿生长距离的分布。本文应用扩散方程和界面质量守
Since the rapid development of liquid phase epitaxy in the 1970s, based on the rich experience of sub-micron heteroepitaxial layers obtained in a short period of time (1 ~ 30s), a theoretical analysis of the LPE short-term growth mechanism has been proposed since 1982 . However, up to now, studies on the changing behavior of LPE in the shortest period of time, especially the initial growth rate, have been conducted qualitatively and speculatively. The most efficient and reliable method for studying heterogeneous interface problems is the Auger depth ion stripping analysis, which shows the distribution of the distance along the growth distance of heterogeneous solid-state bonds at a resolution below 2 nm. In this paper, diffusion equation and interface quality are used