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对某国产0.5μm CMOS(Complementary Metal Oxide Semiconductor,互补金属氧化物半导体)N阱工艺CMOS有源像素传感器的电离总剂量效应进行了研究,通过60Co-γ射线辐照试验,着重分析了对辐射最敏感的暗信号和暗信号非均匀性随总剂量退化的物理机理.实验发现,随着辐照剂量的增加,暗信号和暗信号非均匀性显著退化,并且静态偏置条件下器件的辐射损伤最大.暗信号退化的主要原因是光电二极管pn结和复位晶体管源端N+/Psub结表面边界周围的SiO2产生了大量的界面态;暗信号非均匀性显著退化是由于光电二极管的暗信号增大引起.上述工作可为深入研究CMOS有源像素传感器的抗辐射加固及其辐射损伤评估提供参考.
The total ionization dose effect of a CMOS active pixel sensor fabricated in a 0.5μm CMOS (Complementary Metal Oxide Semiconductor) CMOS process has been studied. By means of 60Co-γ-ray irradiation experiments, Sensitive dark signal and dark signal with the total dose of degradation of the physical mechanism.Experiments found that with the increase of radiation dose, dark signal and dark signal inhomogeneity significantly degraded, and under static bias device radiation damage The main reason for the dark signal degradation is the large number of interface states of SiO 2 around the photodiode pn junctions and the N + / Psub junctions at the source of the reset transistor. The significant degradation of the dark signal nonuniformity is due to the increase of the dark signal of the photodiode The above work can provide reference for further study on the anti-radiation reinforcement and radiation damage assessment of CMOS active pixel sensors.